APTGT100DH120TG APTGT100DH120TG C rev 3 october, 2012 www.microsemi.com 1-6 absolute maximum ratings these devices are sens itive to electrostatic discharge. proper handling procedures should be follow ed. see application note apt0502 on www.microsemi.com vbus q4 out2 out1 vbus sense cr3 0/vbu s g4e4 nt c2 q1 cr2 0/vbus sense nt c1 g1e1 symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v t c = 25c 140 i c continuous collector current t c = 80c 100 i cm pulsed collector current t c = 25c 200 a v ge gate C emitter voltage 20 v p d maximum power dissipation t c = 25c 480 w rbsoa reverse bias safe operating area t j = 125c 200a @ 1100v v ces = 1200v i c = 100a @ tc = 80c application ? welding converters ? switched mode power supplies ? switched reluctance motor drives features ? fast trench + field stop igbt3 technology - low voltage drop - low tail current - switching frequency up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa and scsoa rated ? kelvin emitter for easy drive ? very low stray inductance - symmetrical design - lead frames for power connections ? high level of integration ? internal thermistor for temperature monitoring benefits ? stable temperature behavior ? very rugged ? solderable terminals for easy pcb mounting ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive t c of v cesat ? low profile ? rohs compliant asymmetrical - bridge fast trench + field stop igbt3 p ower module downloaded from: http:///
APTGT100DH120TG APTGT100DH120TG C rev 3 october, 2012 www.microsemi.com 2-6 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 1200v 250 a t j = 25c 1.4 1.7 2.1 v ce(sat) collector emitter saturation voltage v ge =15v i c = 100a t j = 125c 2.0 v v ge(th) gate threshold voltage v ge = v ce , i c = 2 ma 5.0 5.8 6.5 v i ges gate C emitter leakage current v ge = 20v, v ce = 0v 400 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 7200 c oes output capacitance 400 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 300 pf t d(on) turn-on delay time 260 t r rise time 30 t d(off) turn-off delay time 420 t f fall time inductive switching (25c) v ge = 15v v bus = 600v i c = 100a r g = 3.9 ? 70 ns t d(on) turn-on delay time 290 t r rise time 50 t d(off) turn-off delay time 520 t f fall time inductive switching (125c) v ge = 15v v bus = 600v i c = 100a r g = 3.9 ? 90 ns e on turn on energy t j = 125c 10 e off turn off energy v ge = 15v v bus = 600v i c = 100a r g = 3.9 ? t j = 125c 10 mj diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v t j = 25c 250 i rm maximum reverse leakage current v r =1200v t j = 125c 500 a i f dc forward current tc = 80c 100 a t j = 25c 1.4 2.1 v f diode forward voltage i f = 100a v ge = 0v t j = 125c 1.3 v t j = 25c 150 t rr reverse recovery time t j = 125c 250 ns t j = 25c 10 q rr reverse recovery charge t j = 125c 19 c t j = 25c 4.5 e r reverse recovery energy i f = 100a v r = 600v di/dt =2500a/s t j = 125c 8 mj downloaded from: http:///
APTGT100DH120TG APTGT100DH120TG C rev 3 october, 2012 www.microsemi.com 3-6 temperature sensor ntc (see application note apt0406 on www.microsemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? b 25/85 t 25 = 298.15 k 3952 k ?? ? ?? ? ? ?? ? ? ?? ? ? ? t t b r r t 1 1 exp 25 85/25 25 thermal and package characteristics symbol characteristic min typ max unit igbt 0.26 r thjc junction to case thermal resistance diode 0.34 c/w v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m5 2.5 4.7 n.m wt package weight 160 g sp4 package outline (dimensions in mm) all dimensions marked " * " are tolerenced as : see application note apt0501 - mounting instructions for sp4 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t downloaded from: http:///
APTGT100DH120TG APTGT100DH120TG C rev 3 october, 2012 www.microsemi.com 4-6 typical performance curve output characteristics (v ge =15v) t j =25c t j =125c 0 50 100 150 200 01234 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =17v v ge =9v 0 50 100 150 200 01234 v ce (v) i c (a) t j = 125c transfert characteristics t j =25c t j =125c t j =125c 0 25 50 75 100 125 150 175 200 56789101112 v ge (v) i c (a) energy losses vs collector current eon eon eoff er 0 5 10 15 20 25 0 25 50 75 100 125 150 175 200 i c (a) e (mj) v ce = 600v v ge = 15v r g = 3.9 ? t j = 125c eon eoff er 0 5 10 15 20 25 0 5 10 15 20 25 gate resistance (ohms) e (mj) v ce = 600v v ge =15v i c = 100a t j = 125c switching energy losses vs gate resistance reverse bias safe operating area 0 40 80 120 160 200 240 0 300 600 900 1200 1500 v ce (v) i c (a) v ge =15v t j =125c r g =3.9 ? maximum effective transient thermal impedance, junction to case vs pulse durati on 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt downloaded from: http:///
APTGT100DH120TG APTGT100DH120TG C rev 3 october, 2012 www.microsemi.com 5-6 forward characteristic of diode t j =25c t j =125c t j =125c 0 50 100 150 200 250 300 00.40.81.21.622.4 v f (v) i f (a) hard switching zcs zvs 0 10 20 30 40 50 60 0 20 40 60 80 100 120 140 i c (a) fmax, operating frequency (khz) v ce =600v d=50% r g =3.9 ? t j =125c tc=75c operating frequency vs collector current maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) diode downloaded from: http:///
APTGT100DH120TG APTGT100DH120TG C rev 3 october, 2012 www.microsemi.com 6-6 disclaimer the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the ter ms of such agreement will also apply. this document and the information contained herein may not be modified, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication , inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an officer of microsemi. microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with li fe- support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or custo mers final application. user or customer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp life support application seller's products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the seller's product could create a situation where personal injury, death or property damage or loss may occur (collectively "life support applications"). buyer agrees not to use products in any life support applications and to the extent it does it shall conduct extensive testing of the product in such applications and further agrees to indemnify and hold seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damag e or otherwise associated with the use of the goods in life support applications, even if such claim includes allegations that seller was negligent regarding the design or manufacture of the goods. buyer must notify seller in writing before using sellers products in life support applications. seller will study with buyer alternative solutions to meet buyer application specification based on sellers sales conditions applicable for the new proposed specific part. downloaded from: http:///
|
